1 c xxx ez1400-s xx 000-2 chip diagram features ezbright led technology ? 800 mw min. @ 1000 ma - 450 & 460 nm lambertian radiation conductive epoxy, solder paste or preforms, or flux eutectic attach low forward voltage dielectric passivation across epi surface applications general illumination ? aircraft ? decorative lighting ? task lighting ? outdoor illumination white leds projection displays automotive camera flash cree ? ez1400? gen ii leds data sheet c xxx ez1400-s xx 000-2 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device submount technology to deliver superior value for high- intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications such as general illumination, automotive lighting, projection displays and camera fash. d a t a s h e e t : c p r 3 e k r e v . - top view bottom view die cross section 1380 x 1380 m cathodes (-) 150 x 150 m 170 m anode (+) ausn mesa (junction) 1350 x 1350 m thickness subject to change without notice. www.cree.com
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1400 and ez are trademarks of cree, inc. 2 cpr3ek rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com maximum ratings at t a = 25c note 1 c xxx ez1400-s xx 000-2 dc forward current 1500 ma peak forward current (1/10 duty cycle @ 1 khz) 1500 ma led junction temperature 145c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +125c typical electrical/optical characteristics at t a = 25c, if = 1000 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez1400-s xx 000-2 3.3 3.7 4.3 2 20 c460ez1400-s xx 000-2 3.3 3.7 4.3 2 21 mechanical specifcations c xxx ez1400-s xx 000-2 description dimensions tolerance p-n junction area (m) 1350 x 1350 35 chip area (m) 1380 x 1380 35 chip thickness (m) 170 25 top au bond pad (m) - qty. 2 150 x 150 25 au bond pad thickness (m) 3.0 1.5 back contact metal area (m) 1380 x 1380 35 back contact metal thickness (m) 3.0 1.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a 3.45 x 3.45 mm smt package without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 1000 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics were measured in an integrating sphere using illuminance e.
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1400 and ez are trademarks of cree, inc. 3 cpr3ek rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com standard bins for c xxx ez1400-s xx 000-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez1400-s xx000-2 ) orders may be flled with any or all bins (c xxx ez1400-0 xxx-2 ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 1000 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. C450EZ1400-S80000-2 c450ez1400-0217-2 c450ez1400-0218-2 c450ez1400-0219-2 c450ez1400-0220-2 c450ez1400-0213-2 c450ez1400-0214-2 c450ez1400-0215-2 c450ez1400-0216-2 c450ez1400-0209-2 c450ez1400-0210-2 c450ez1400-0211-2 c450ez1400-0212-2 c450ez1400-0205-2 c450ez1400-0206-2 c450ez1400-0207-2 c450ez1400-0208-2 1250 mw 1100 mw 950 mw 800 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm c460ez1400-s80000-2 c460ez1400-0217-2 c460ez1400-0218-2 c460ez1400-0219-2 c460ez1400-0220-2 c460ez1400-0213-2 c460ez1400-0214-2 c460ez1400-0215-2 c460ez1400-0216-2 c460ez1400-0209-2 c460ez1400-0210-2 c460ez1400-0211-2 c460ez1400-0212-2 c460ez1400-0205-2 c460ez1400-0206-2 c460ez1400-0207-2 c460ez1400-0208-2 dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm 1250 mw 1100 mw 950 mw 800 mw
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1400 and ez are trademarks of cree, inc. 4 cpr3ek rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com characteristic curves, t a = 25c this is a representative measurement for the ez1400 led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 25% 50% 75% 100% 125% 150% 0 250 500 750 1000 1250 1500 % relative intensity if (ma) relative intensity vs. forward current - 1 - 0.5 0 0.5 1 1.5 2 2.5 3 0 250 500 750 1000 1250 1500 dw shift (nm) if (ma) wavelength shift vs. forward current 0% 25% 50% 75% 100% 125% 150% 0 250 500 750 1000 1250 1500 % relative intensity if (ma) relative intensity vs. forward current - 1 - 0.5 0 0.5 1 1.5 2 2.5 3 0 250 500 750 1000 1250 1500 dw shift (nm) if (ma) wavelength shift vs. forward current 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs. junction temperature 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 25 50 75 100 125 150 relative light intensity (%) junction temperature ( c) relative light intensity vs. junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs. junction temperature 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 25 50 75 100 125 150 relative light intensity (%) junction temperature ( c) relative light intensity vs. junction temperature - 0.350 - 0.300 - 0.250 - 0.200 - 0.150 - 0.100 - 0.050 0.000 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs. junction temperature 0 250 500 750 1000 1250 1500 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1400 and ez are trademarks of cree, inc. 5 cpr3ek rev. - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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